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Issue DateTitleAuthor(s)
199811MOCVD growth of GaN on sapphire substrate using N-atom source based on a dielectric barrier discharge method김주성; 변동진; 김진상; 금동화
201007Metalorganic Chemical Vapor Deposition of CdTe(133) Epilayers on Si(211) Substrates김광천; 김현재; 서상희; M. Carmody; S. Sivananthan; 김진상
201004Growth of Large Scale CdTe(400) Thin Films by MOCVD김광천; 정규호; 유현우; 임주혁; 김현재; 김진상
201406Thermopower Enhancement of Bi2Te3 Films by Doping I Ions김광천; 백승협; 현도빈; 김성근; 김진상
201211Epitaxial growth of CdTe films on GaAs-buffered (001) Si substrates by metal organic chemical vapor deposition김광천; 백승협; 최원철; 김현재; 송진동; 김진상
199809MOCVD growth of AlN, GaN/Si using an N-atom source based on a dielect barrier discharge method김진상; 금동화; 이지화
201006Growth of Nano Structure Bi2Te3 Films using Modified MOCVD Technique유현우; 정규호; 임주혁; 김광천; 박찬; 김진상
200907Fabrication of Bismuth Telluride-Based Alloy Thin Film Thermoelectric Devices Grown by Metal Organic Chemical Vapor Deposition권성도; 주병권; 윤석진; 김진상
200805Chemical Treatment of Substrates for Improving the Surface Morphology of BiSbTe3 Thin Films on Sapphire권성도; 정대용; 윤석진; 김진상; 주병권
201506Thermoelectric Properties of Sn-Doped Bi0.4Sb1.6Te3 Thin Films김광천; 권범진; 김현재; 백승협; 박찬; 김성근; 김진상