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Issue DateTitleAuthor(s)
199601GaAs(100) 및 GaAs(311)A 기판위에 성장시킨 InGaAs 에피층의 격자변형에 관한 연구손창식; 진현철; 한철구; 이정훈; 강준모; 김용; 김무성; 민석기; 김창수
199608Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates김성일; 김무성; 김용; 손창식; 황성민; 민병돈; 김은규; 민석기
199811GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates김은규; 김태근; 손창식; 황성민; 김용; 박영균; 민석기
199301Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD.손창식; 김성일; 김용; 이민석; 김무성; 민석기; 곽명현; 마동성
199702Temperature dependence of photoluminescence peak from carbon-doped GaAs epilayers grown on high miller index GaAs substrates조신호; 손창식; 이달진; 김성일; 김용; 김은규; 민석기
199712Dependence of electrical properties on the crystallographic orientation of CBr//4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition김성일; 민석기; 최인훈; 손창식; 김은규
199704Electrical properties of rapid thermal annealed carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition손창식; 김성일; 김태근; 김용; 조신호; 박영균; 김은규; 민석기; 최인훈
200306Growth and characterization of triangular InGaAs/GaAs quantum wire structures grown by low-pressure metalorganic chemical vapor deposition김성일; 손창식; 김영환; 김용태
200308Growth and characterization of triangular-shaped AlGaAs/GaAs and InGaAs/GaAa quantum wire structures김성일; 김영환; 이유종; 손창식
199609MOCVD 법에 의한 GaAs/AlGaAs 에피층의 수평 방향 성장률에 대한 CCl4 유입 효과김성일; 김무성; 김용; 황성민; 민병돈; 손창식; 김은규; 민석기

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