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Issue DateTitleAuthor(s)
199608Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates김성일; 김무성; 김용; 손창식; 황성민; 민병돈; 김은규; 민석기
199811GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates김은규; 김태근; 손창식; 황성민; 김용; 박영균; 민석기
199702Temperature dependence of photoluminescence peak from carbon-doped GaAs epilayers grown on high miller index GaAs substrates조신호; 손창식; 이달진; 김성일; 김용; 김은규; 민석기
199712Dependence of electrical properties on the crystallographic orientation of CBr//4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition김성일; 민석기; 최인훈; 손창식; 김은규
199704Electrical properties of rapid thermal annealed carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition손창식; 김성일; 김태근; 김용; 조신호; 박영균; 김은규; 민석기; 최인훈
199609MOCVD 법에 의한 GaAs/AlGaAs 에피층의 수평 방향 성장률에 대한 CCl4 유입 효과김성일; 김무성; 김용; 황성민; 민병돈; 손창식; 김은규; 민석기
199607CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질손창식; 김성일; 민병돈; 김은규; 민석기; 최인훈
199601Electrical properties of carbon-doped GaAs epilayers by atmospheric pressure MOCVD using CBr//4.손창식; 김성일; 김은규; 민병돈; 민석기; 최인훈
199601Lateral growth rate control of GaAs on patterned substrates by CCl//4 and CBr//4 during MOCVD.김성일; 김무성; 민석기; 김용; 황성민; 민병돈; 손창식; 김은규
199608Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array김태근; 박정호; 김용; 김성일; 손창식; 김무성; 김은규; 민석기