Results 1-6 of 6 (Search time: 0.004 seconds).
|199201||Temperature dependence of photoluminescence for GaAs/AlGaAs single quantum well grown by MOCVD with and without growth-interuption.||김성일; 민석기; 김용; 김무성; 엄경숙; 김영덕; 이민석|
|199401||The electrical and optical characteristics of carbon doped GaAs epilayers grown by MOCVD.||김성일; 민석기; 김용; 김무성|
|200306||Growth and characterization of triangular InGaAs/GaAs quantum wire structures grown by low-pressure metalorganic chemical vapor deposition||김성일; 손창식; 김영환; 김용태|
|199301||Temperature dependent PL characteristics of C-doped GaAs by LPMOCVD.||김성일; 민석기; 김용; 김무성; 이민석|
|200406||Growth of Trianglar Shaped InGaAs/GaAs Quantum Wire Structure with Various Thicknesses in One Chip||김성일; 김영환; 한일기|
|199301||Experimental and theoretical photoluminescence study of heavily carbon doped GaAs grown by low-pressure metalorganic chemical vapor deposition||김성일; 김무성; 민석기; 이주천|