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|199706||Direct formation of nanocrystalline silicon by electron cyclotron resonance chemical vapor deposition||최원철; 김은규; 민석기; 박종윤; 김준형; 성태연|
|200502||Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices||송진동; 박용주; 한일기; 최원준; 조운조; 이정일; 조용훈; 이정용|
|201503||Fabrication of a white electroluminescent device based on bilayered yellow and blue quantum dots||Jong-Hoon Kim; Ki-Heon Lee; Hee-Don Kang; Byoungnam Park; 황준연; 장호성; Young Rag Do; Heesun Yang|
|200604||Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication||송진동; 최원준; 이정일; 이정용|