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dc.contributor.authorC. A. Dimitriadis-
dc.contributor.author이정일-
dc.contributor.authorP. Patsalas-
dc.contributor.authorS. Logothetidis-
dc.contributor.authorD. H. Tassis-
dc.contributor.authorJ. Brini-
dc.contributor.authorG. Kamarinos-
dc.date.accessioned2015-12-02T05:34:08Z-
dc.date.available2015-12-02T05:34:08Z-
dc.date.issued199904-
dc.identifier.citationVOL 85, NO 8, 4238-4242-
dc.identifier.issn0021-8979-
dc.identifier.other10977-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/18070-
dc.publisherJournal of applied physics-
dc.subjectreactive magnetron sputtering-
dc.titleCharacteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering-
dc.typeArticle-
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