Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx capping layer

Title
Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx capping layer
Authors
최원준이희택우덕하이석김선호강광남조재원
Keywords
PECVD; combination of dielectric-semiconductor capping; quantum well intermixing; control by gas ratio
Issue Date
1999-11
Publisher
Marerials Research Society Symposium Proceedings
Citation
VOL 607, 515-518
URI
http://pubs.kist.re.kr/handle/201004/18260
Appears in Collections:
KIST Publication > Conference Paper
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