Improvement in diffusion barrier properties of PECVD W-N thin film by low energy BF2+ implantation

Title
Improvement in diffusion barrier properties of PECVD W-N thin film by low energy BF2+ implantation
Authors
김동준김용태박영균심현상박종완
Keywords
PECVD; W-N; BF2+ implantation; diffusion barrier
Issue Date
1999-01
Publisher
Proc. of EOS/SPIE Symposium on Microelectronic Manufacturing Technologies
Abstract
The structural and electrical properties of BF2+ implanted PECVD tungsten nitride thin film were investigated. After BF2+ implantation with 40keV and 1 X 1017 B ions/㎠, W-B+-N layer was formed at the surface region of W-N films. The ternary layer maintained the microcrystalline state and prevented nitrogen out-diffusion form W-N thin film after annealing at 800 degrees C for 30 min. The overall electrical resistivity of W-B+-N/W-N thin film is 200 (mu) (Omega) cm, which is higher than that of W-N thin film because of forming the ternary phase. BF2+ implanted tungsten nitride thin film improved thermal stability against Cu diffusion more than W-N thin film.
URI
http://pubs.kist.re.kr/handle/201004/18503
Appears in Collections:
KIST Publication > Conference Paper
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