Characteristics of molybdenum nitride thin film by N2+ ion implantation
- Characteristics of molybdenum nitride thin film by N2+ ion implantation
- 김동준; 김익수; 김용태; 박종완
- molybdenum nitride; ion implantation; diffusion barrier
- Issue Date
- Materials Research Society
- Molybdenum nitride thin films were prepared by N2' implantation with acceleration energy of 20 keV and the ion dose of 3x1017 ions/cm2.The structural property and thermal stability of the films were investigated by XRD, AES, AFM and RBS. The crystal structure of N2+ implanted molybdenum thin films (Mo-N 2+)which had microcrystalline state was transformed to y-Mo 2N phase with a preferred (111) orientation after a post-annealing at 500 'C for 30min. However, a silicide reaction was not observed even after the annealing at 700 'C, which is due to the modification of the interface between Mo thin film and Si substrate by N2' implantation. Also, Cu diffusion did not seem to be induced by the annealing at 700 'C for 30 min. The internal stress of the Mo-N 2+thin films during post-annealing at 600 'C for 30min was found to change from highly compressive stress to low tensile stress.
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