Characteristics of molybdenum nitride thin film by N2+ ion implantation

Title
Characteristics of molybdenum nitride thin film by N2+ ion implantation
Authors
김동준김익수김용태박종완
Keywords
molybdenum nitride; ion implantation; diffusion barrier
Issue Date
1999-01
Publisher
Materials Research Society
Abstract
Molybdenum nitride thin films were prepared by N2' implantation with acceleration energy of 20 keV and the ion dose of 3x1017 ions/cm2.The structural property and thermal stability of the films were investigated by XRD, AES, AFM and RBS. The crystal structure of N2+ implanted molybdenum thin films (Mo-N 2+)which had microcrystalline state was transformed to y-Mo 2N phase with a preferred (111) orientation after a post-annealing at 500 'C for 30min. However, a silicide reaction was not observed even after the annealing at 700 'C, which is due to the modification of the interface between Mo thin film and Si substrate by N2' implantation. Also, Cu diffusion did not seem to be induced by the annealing at 700 'C for 30 min. The internal stress of the Mo-N 2+thin films during post-annealing at 600 'C for 30min was found to change from highly compressive stress to low tensile stress.
URI
http://pubs.kist.re.kr/handle/201004/18550
Appears in Collections:
KIST Publication > Conference Paper
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