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dc.contributor.author김영석-
dc.contributor.author김동준-
dc.contributor.author곽성관-
dc.contributor.author김은규-
dc.contributor.author민석기-
dc.contributor.author정동근-
dc.date.accessioned2015-12-02T05:43:30Z-
dc.date.available2015-12-02T05:43:30Z-
dc.date.issued199804-
dc.identifier.citationVOL 37, NO 4B, L462-L464-
dc.identifier.issn0021-4922-
dc.identifier.other9190-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/18856-
dc.publisherJapanese Journal of Applied Physics, Part 2 - Letters-
dc.subjectselective growth-
dc.titleEnhancement of selective chemical vapor deposition of copper by nitrogen plasma pretreatment-
dc.typeArticle-
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