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dc.contributor.authorShu Yuan-
dc.contributor.author김용-
dc.contributor.authorH. H. Tan-
dc.contributor.authorC. Jagadish-
dc.contributor.authorP. T. Burke-
dc.contributor.authorL. V. Dao-
dc.contributor.authorM. Gal-
dc.contributor.authorM. C. Y. Chan-
dc.contributor.authorE. H. Li-
dc.contributor.authorJ. Zou-
dc.contributor.authorD. Q. Cai-
dc.contributor.authorD. J. H. Cockayene-
dc.contributor.authorR. M. Cohen-
dc.date.accessioned2015-12-02T05:45:12Z-
dc.date.available2015-12-02T05:45:12Z-
dc.date.issued199802-
dc.identifier.citationVOL 83, NO 3, 1305-1311-
dc.identifier.issn0021-8979-
dc.identifier.other9000-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/18955-
dc.publisherJournal of applied physics-
dc.subjectMOCVD-
dc.subjectintermixing-
dc.subjectquantum wells-
dc.subjectquantum wires-
dc.subjectoxidation-
dc.titleAnodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells-
dc.typeArticle-
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