Iodine and arsenic doping of (100)HgCdTe/GaAs grown by metalorganic vapor phase epitaxy using isopropyl iodide and tris-dimethylaminoarsenic

Title
Iodine and arsenic doping of (100)HgCdTe/GaAs grown by metalorganic vapor phase epitaxy using isopropyl iodide and tris-dimethylaminoarsenic
Authors
송종형김제원박만장김진상정관욱서상희
Keywords
iodine; arsenic; doping; HgCdTe; MOVPE
Issue Date
1998-02
Publisher
Journal of crystal growth
Citation
VOL 184/185, 1232-1236
URI
http://pubs.kist.re.kr/handle/201004/18967
ISSN
0022-0248
Appears in Collections:
KIST Publication > Article
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