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Issue DateTitleAuthor(s)
199401The temperature dependence of the electrical properties of carbon doped GaAs.김성일; 민석기; 김용; 김무성
198905Photoquenching effect and thermal recovery process for midgap levels in GaAs : An EL2 family in GaAs.김은규; 조훈형; 민석기
199101Growth of GaAs crystal by an improved VGF apparatus.한철원; 심광보; 박용주; 박승철; 민석기
199201저압 MOCVD 에 의한 GaAs 에피층의 Carbon 도핑특성 .김용; 김성일; 민석기; 엄경숙; 김무성; 곽병현; 마동성
199301The properties of the quantum wires grown on V-grooved Al//0//.//3Ga//0//.//7As/GaAs substrate at atmospheric pressure metalorganic chemical vapor deposition.김성일; 김무성; 민석기; 이민석; 김용; 김영덕; 남산
199301LPMOCVD 방법에 의한 탄소도핑된 갈륨비소 에피층의 격자 수축 및 임계두께 해석 .김성일; 김무성; 민석기
199301Fabrication of single GaAs substrate by MOCVD.김성일; 민석기; 김용; 김무성; 이민석; 김영덕
199201Temperature dependence of photoluminescence for GaAs/AlGaAs single quantum well grown by MOCVD with and without growth-interuption.김성일; 민석기; 김용; 김무성; 엄경숙; 김영덕; 이민석
199608Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates김성일; 김무성; 김용; 손창식; 황성민; 민병돈; 김은규; 민석기
198701Theoretical calculations on absorption, emission and gain spectra in AlGaAs active layer of the visible DH laser diode.김성일; 민석기; 엄경숙; 김무성