MOCVD growth of GaN on sapphire substrate using N-atom source based on a dielectric barrier discharge method

Title
MOCVD growth of GaN on sapphire substrate using N-atom source based on a dielectric barrier discharge method
Authors
김주성변동진김진상금동화
Keywords
MOCVD
Issue Date
1998-11
Publisher
Abst. the 9th Seoul international symposium on the physics of semiconductors and applications (ISPSA
Citation
, 104-104
URI
http://pubs.kist.re.kr/handle/201004/19032
Appears in Collections:
KIST Publication > Conference Paper
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