Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy

Title
Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy
Authors
김제원손창식심선일최인훈박영균김용태O. AmbacherM. Stutzmann
Keywords
Absorption Properties; AlGaN; Gallium Nitride; molecular beam epitaxy
Issue Date
1998-10
Publisher
한국물리학회 회보; Bulletin of the Korean Physical Society
Citation
VOL 16, NO 2, 471-471
URI
http://pubs.kist.re.kr/handle/201004/19127
Appears in Collections:
KIST Publication > Conference Paper
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