The effect of substrate surface roughness on GaN growth using MOCVD process

Title
The effect of substrate surface roughness on GaN growth using MOCVD process
Authors
금동화변동진
Keywords
GaN-buffer layer; nitridation; AFM roughness
Issue Date
1997-10
Publisher
Journal of electronic materials
Citation
VOL 26, NO 10, 1098-1102
URI
http://pubs.kist.re.kr/handle/201004/19730
ISSN
0361-5235
Appears in Collections:
KIST Publication > Article
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