Reactive ion (N₂+) beam treatment of sapphire for GaN deposition

Title
Reactive ion (N₂+) beam treatment of sapphire for GaN deposition
Authors
금동화변동진정재식김병호고석근최원국박달근
Keywords
reactive ion beam
Issue Date
1997-01
Publisher
The second International Conference on Nitride Semiconductors -ICNS'97-, P2-39, October 27-31, 1997,
Citation
, 314-?
URI
http://pubs.kist.re.kr/handle/201004/19835
Appears in Collections:
KIST Publication > Conference Paper
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