MOCVD 법에 의한 GaAs/AlGaAs 에피층의 수평 방향 성장률에 대한 CCl4 유입 효과

Title
MOCVD 법에 의한 GaAs/AlGaAs 에피층의 수평 방향 성장률에 대한 CCl4 유입 효과
Authors
김성일김무성김용황성민민병돈손창식김은규민석기
Keywords
MOCVD; GaAs/AlGaAs; lateral growth rate; CCl4 gas
Issue Date
1996-09
Publisher
응용물리; Ungyong Mulli (The Korean physical society)
Citation
VOL 9, NO 5, 636-641
URI
http://pubs.kist.re.kr/handle/201004/20055
Appears in Collections:
KIST Publication > Article
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