Status and new evaluation method of interfacial oxide between directly-bonded Si wafer pairs

Title
Status and new evaluation method of interfacial oxide between directly-bonded Si wafer pairs
Authors
주병권이윤희오명환
Keywords
wafer bonding; annealing; elemental semiconductors; etching; interface structure; materials testing; semiconductor-insulator boundaries; silicon
Issue Date
1996-02
Publisher
IEEE MEMS '96, San Diego, USA.
Citation
, 337-342
URI
http://pubs.kist.re.kr/handle/201004/20175
Appears in Collections:
KIST Publication > Conference Paper
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