The effect of substrate surface morphology on GaN by MOCVD.

Title
The effect of substrate surface morphology on GaN by MOCVD.
Authors
금동화변동진김긍호
Issue Date
1996-01
Publisher
The 8th Seoul international symposium on the physics of semiconductors and applications
Citation
, ?-?
URI
http://pubs.kist.re.kr/handle/201004/20292
Appears in Collections:
KIST Publication > Conference Paper
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