Heavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4.

Title
Heavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4.
Authors
손창식김성일민병돈황성민김은규민석기최인훈
Keywords
carbon
Issue Date
1996-01
Publisher
Bulletin of the Korean physical society
Citation
v. 14, no. 1, 239-?
URI
http://pubs.kist.re.kr/handle/201004/20407
Appears in Collections:
KIST Publication > Conference Paper
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