CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질

Title
CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질
Authors
손창식김성일민병돈김은규민석기최인훈
Keywords
CBr4; 2 ˚ off (100) GaAs; carbon doping; MOCVD
Issue Date
1996-07
Publisher
응용물리; Ungyong Mulli (The Korean physical society)
Citation
VOL 9, NO 4, 529-534
URI
http://pubs.kist.re.kr/handle/201004/20442
Appears in Collections:
KIST Publication > Article
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