Characteristics of the plasma-induced GaAs nitride layer and its application for the selective area growth.

Title
Characteristics of the plasma-induced GaAs nitride layer and its application for the selective area growth.
Authors
김성일민석기김은규박영주최원철이상훈손맹호
Keywords
MOCVD
Issue Date
1996-01
Publisher
Bulletin of the Korean physical society
Citation
v. 14, no. 2, 507-?
URI
http://pubs.kist.re.kr/handle/201004/20475
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE