Enhancement effect of plasma enhanced chemical vapor deposition SiN capping layer on dielectric cap quantum well disordering.

Title
Enhancement effect of plasma enhanced chemical vapor deposition SiN capping layer on dielectric cap quantum well disordering.
Authors
김용최원준이석Jingming Zhang김상국이정일강광남조규만
Keywords
disordering
Issue Date
1995-04
Publisher
Japanese journal of applied physics
Citation
v. 34, no. 4A, L418-L421
URI
http://pubs.kist.re.kr/handle/201004/20652
Appears in Collections:
KIST Publication > Article
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