Plasma effect in dielectric cap quantum well disordering using plasma enhanced chemical vapor deposited SiN capping layer.

Title
Plasma effect in dielectric cap quantum well disordering using plasma enhanced chemical vapor deposited SiN capping layer.
Authors
이석W. J. ChoiJ. Zhang김용S. K. Kim이정일강광남K. Cho
Keywords
quantum well disordering
Issue Date
1995-01
Publisher
Japanese journal of applied physics
Citation
v. 34, L418-?
URI
http://pubs.kist.re.kr/handle/201004/20825
Appears in Collections:
KIST Publication > Article
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