화학선속 증착법 (Chemical Beam Epitaxy) 으로 성장한 InGaAsP 시료의 광루미네슨스 특성 .

Title
화학선속 증착법 (Chemical Beam Epitaxy) 으로 성장한 InGaAsP 시료의 광루미네슨스 특성 .
Authors
강광남우덕하한일기최원준김회종김선호이정일
Keywords
InGaAsP
Issue Date
1995-01
Publisher
Bull. Korean phys. soc.
Citation
v. 13, no. 2, 499-?
URI
http://pubs.kist.re.kr/handle/201004/20924
Appears in Collections:
KIST Publication > Article
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