Quantum well disordering by using plasma enhanced chemical vapor deposited SiN//x film as a capping layer.

Title
Quantum well disordering by using plasma enhanced chemical vapor deposited SiN//x film as a capping layer.
Authors
강광남W. J. ChoiS. LeeY. Kim이정일S. K. Kim
Keywords
quantum well disordering
Issue Date
1994-09
Publisher
Ist Korea-Chinese semiconductor conference, Beijing, China
Citation
, ?-?
URI
http://pubs.kist.re.kr/handle/201004/20977
Appears in Collections:
KIST Publication > Conference Paper
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