Effect of ultraviolet illumination on the charge trapping behaviour in SiNx/InP metal-insulator-semiconductor structure provided by plasma enhanced chemical vapor deposition.

Title
Effect of ultraviolet illumination on the charge trapping behaviour in SiNx/InP metal-insulator-semiconductor structure provided by plasma enhanced chemical vapor deposition.
Authors
강광남이정일한일기C. H. KimS. D. KwonB. ChoeH. L. ParkJ. HerH. Lim
Keywords
SiNx/InP MIS structure
Issue Date
1994-01
Publisher
Journal of material science letters
Citation
v. 13, 563-?
URI
http://pubs.kist.re.kr/handle/201004/21177
Appears in Collections:
KIST Publication > Article
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