Study on the low-field charge-trapping phenomena in the silicon-nitride/InP structure.

Title
Study on the low-field charge-trapping phenomena in the silicon-nitride/InP structure.
Authors
강광남이정일한일기C. H. KimS. D. KwonB. D. ChoeJ. HerH. Lim
Keywords
charge-trapping phenomena
Issue Date
1993-01
Publisher
J. Korea phys. soc.
Citation
v. 26, 518-?
URI
http://pubs.kist.re.kr/handle/201004/21365
Appears in Collections:
KIST Publication > Article
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