A MOSFET type sensor for oxygen sensing using LaF//3 as a gate material.

Title
A MOSFET type sensor for oxygen sensing using LaF//3 as a gate material.
Authors
조원일윤경석조병원이철환주재백최성권Noboru Yamazoe
Keywords
MOSFET; sputtering; platinum; thin film; dissolved oxygen; gate voltage; drain curretn; Nernst slope; LaF//3; gate material
Issue Date
1993-01
Publisher
Sensors and actuators B
Citation
v. 13-14, 45-48
URI
http://pubs.kist.re.kr/handle/201004/21443
Appears in Collections:
KIST Publication > Article
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