Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4.

Title
Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4.
Authors
손창식김성일김용이민석민석기김무성최인훈
Keywords
carbon; doping; InGaAs; CCl4; MOCVD
Issue Date
1993-01
Publisher
Bulletin of the Korean physical society
Citation
v. 11, no. 2, 356-?
URI
http://pubs.kist.re.kr/handle/201004/21456
Appears in Collections:
KIST Publication > Conference Paper
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