Growth and characterization of GaAs layer by molecular beam epitaxy.

Title
Growth and characterization of GaAs layer by molecular beam epitaxy.
Authors
김은규민석기S. W. LeeH. Y. ChoH. S. KimJ. H. Park
Keywords
GaAs layer; molecular beam epitaxy; characterization
Issue Date
1992-06
Publisher
Proc. KITE summer conf. '92
Citation
v. 15, no. 1, 329-332
URI
http://pubs.kist.re.kr/handle/201004/21517
Appears in Collections:
KIST Publication > Conference Paper
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