Room-temperature hydrogenation effect in Si-and Be-ion implanted GaAs.

Title
Room-temperature hydrogenation effect in Si-and Be-ion implanted GaAs.
Authors
김은규조훈영민석기H. S. Lee
Keywords
hydrogenation; ion implantation; GaAs
Issue Date
1992-02
Publisher
Journal of applied physics
Citation
v. 71, no. 4, 1690-1692
URI
http://pubs.kist.re.kr/handle/201004/21539
Appears in Collections:
KIST Publication > Article
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