MOCVD 법으로 Si 기판위에 성장된 GaAs 에피층의 수소화 효과 .

Title
MOCVD 법으로 Si 기판위에 성장된 GaAs 에피층의 수소화 효과 .
Authors
김용김무성김은규조훈영김현수민석기
Keywords
MOCVD; GaAs-on-Si; DLTS; hydrogenation
Issue Date
1991-02
Publisher
새물리
Citation
v. 31, 31-37
URI
http://pubs.kist.re.kr/handle/201004/21742
Appears in Collections:
KIST Publication > Article
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