The observation of striation in GaAs : Si single crystal grown by horizontal bridgman method.

Title
The observation of striation in GaAs : Si single crystal grown by horizontal bridgman method.
Authors
박용주박찬용박승철한철원민석기김기수
Keywords
수평 bridgman; striation; AB etching; GaAs doped with Si
Issue Date
1991-12
Publisher
새물리; New physics
Citation
v. 31, no. 6, 709-715
URI
http://pubs.kist.re.kr/handle/201004/21775
Appears in Collections:
KIST Publication > Article
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