MOCVD 법에 의한 delta-doped GaAs FET 소자의 제작 및 특성 .

Title
MOCVD 법에 의한 delta-doped GaAs FET 소자의 제작 및 특성 .
Authors
김용김무성강명구오환술엄경숙민석기
Keywords
delta-doped FET; MOCVD; etching
Issue Date
1991-01
Publisher
전자공학회지
Citation
v. 28, no. 8, 48-?
URI
http://pubs.kist.re.kr/handle/201004/21800
Appears in Collections:
KIST Publication > Article
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