Rapid thermal annealing dependence of deep electron traps in GaAs-on-Si grown by MOCVD.

Title
Rapid thermal annealing dependence of deep electron traps in GaAs-on-Si grown by MOCVD.
Authors
김은규조훈영김용김현수민석기M. S. Kim
Keywords
rapid thermal annealing; deep electron trap; GaAs-on-Si; MOCVD
Issue Date
1991-01
Publisher
Proc. 4th Asia Pacific phys. conf.
Citation
v. 1, 584-587
URI
http://pubs.kist.re.kr/handle/201004/21817
Appears in Collections:
KIST Publication > Conference Paper
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