Fabrication of quantum well high electron mobility transistor grown by MOCVD.

Title
Fabrication of quantum well high electron mobility transistor grown by MOCVD.
Authors
김성일민석기김용김무성엄경숙K. H. YooG. IhmS. K. Noh
Keywords
MOCVD; GaAs; HEMT
Issue Date
1991-01
Publisher
Bull. Korean phys. soc.
Citation
v. 9, no. 2, 305-?
URI
http://pubs.kist.re.kr/handle/201004/21832
Appears in Collections:
KIST Publication > Conference Paper
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