Interface properties and capacitance-voltage behavior of indium phosphide metal-insulator-semicondutor prepared by plasma-assisted oxidaiton.

Title
Interface properties and capacitance-voltage behavior of indium phosphide metal-insulator-semicondutor prepared by plasma-assisted oxidaiton.
Authors
강광남이정일H. LimJ. A. BaglioN. DecolaH. L. Park
Keywords
interface properties
Issue Date
1991-01
Publisher
Journal of applied physics
Citation
v. 69, no. 11, 7918-?
URI
http://pubs.kist.re.kr/handle/201004/21839
Appears in Collections:
KIST Publication > Article
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