Deep levels in GaAs grown on Si during rapid thermal annealing.

Title
Deep levels in GaAs grown on Si during rapid thermal annealing.
Authors
김용조훈영김은규윤주훈조성호민석기
Keywords
deep levels; GaAs-on-Si; rapid thermal annealing
Issue Date
1990-02
Publisher
Applied physics letters
Citation
v. 56, 761-763
URI
http://pubs.kist.re.kr/handle/201004/21916
Appears in Collections:
KIST Publication > Article
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