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dc.contributor.author김용-
dc.contributor.author조훈영-
dc.contributor.author김은규-
dc.contributor.author윤주훈-
dc.contributor.author조성호-
dc.contributor.author민석기-
dc.date.accessioned2015-12-02T07:44:26Z-
dc.date.available2015-12-02T07:44:26Z-
dc.date.issued199002-
dc.identifier.citationv. 56, 761-763-
dc.identifier.other1842-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/21916-
dc.publisherApplied physics letters-
dc.subjectdeep levels-
dc.subjectGaAs-on-Si-
dc.subjectrapid thermal annealing-
dc.titleDeep levels in GaAs grown on Si during rapid thermal annealing.-
dc.typeArticle-
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