Si 이온주입된 반절연성 GaAs:Cr 의 열처리에 따른 깊은 준위연구 .

Title
Si 이온주입된 반절연성 GaAs:Cr 의 열처리에 따른 깊은 준위연구 .
Authors
김은규조훈영홍치유민석기이호섭강태원
Keywords
Si ion implantation; semi-insulating GaAs:Cr; thermal annealing; deep level
Issue Date
1990-02
Publisher
새물리
Citation
v. 30, no. 1, 41-46
URI
http://pubs.kist.re.kr/handle/201004/21917
Appears in Collections:
KIST Publication > Article
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