A relation between EL2(E//c-0.81eV) and EL6(E//c-0.35eV) in annealed HB-GaAs by hydrogen plasma exposure.

Title
A relation between EL2(E//c-0.81eV) and EL6(E//c-0.35eV) in annealed HB-GaAs by hydrogen plasma exposure.
Authors
김은규조훈형민석기
Keywords
EL2; EL6; HB-GaAs; hydrogen plasma
Issue Date
1989-10
Publisher
Journal of applied physics
Citation
v. 66, no. 7, 3038-3041
URI
http://pubs.kist.re.kr/handle/201004/22114
Appears in Collections:
KIST Publication > Article
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