(100) 실리콘 기판위에 MOCVD 법으로 성장된 GaAs 에피층의 결정구조 특성 .

Title
(100) 실리콘 기판위에 MOCVD 법으로 성장된 GaAs 에피층의 결정구조 특성 .
Authors
김용김무성김현수민석기
Keywords
X-ray diffraction; GaAs-on-Si; MOCVD
Issue Date
1988-07
Publisher
응용물리
Citation
v. 1, 121-?
URI
http://pubs.kist.re.kr/handle/201004/22167
Appears in Collections:
KIST Publication > Article
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