Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiN//x capping layer

Title
Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiN//x capping layer
Authors
최원준한상민S. I. ShahS. G. Choi우덕하이석김선호이정일강광남조재원
Keywords
Hydrogrn content in capping layer
Issue Date
1998-07
Publisher
IEEE journal on selected topics in quantum electronics
Citation
VOL 4, NO 4, 624-628
URI
http://pubs.kist.re.kr/handle/201004/22661
ISSN
1077-260X
Appears in Collections:
KIST Publication > Article
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