Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers

Title
Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers
Authors
이희택조재원최원준우덕하김선호강광남
Keywords
quantum well intermixing
Issue Date
2000-01
Publisher
Journal of materials science letters
Citation
VOL 19, 835-836
URI
http://pubs.kist.re.kr/handle/201004/22798
ISSN
0261-8028
Appears in Collections:
KIST Publication > Article
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