Dependence of dielectric cap quantum well disordering on the characteristics of dielectric capping film
- Dependence of dielectric cap quantum well disordering on the characteristics of dielectric capping film
- dielectric cap quantum well intermixing; SiN film; PECVD
- Issue Date
- Qantum well intermixing : material properties and optoelectronic application
- , 443-469
- Appears in Collections:
- KIST Publication > ETC
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