Structural characteristics on InAs quantum dots multi-stacked on GaAs(100) substrates
- Structural characteristics on InAs quantum dots multi-stacked on GaAs(100) substrates
- 노정현; 박용주; 김은규; 심광보
- self-assembled quantum dots; molecular beam epitaxy; photoluminescence; volcano-like defect
- Issue Date
- 마이크로전자 및 패키징학회지; Journal of Microelectronics and Packaging Society
- VOL 7, NO 1, 25-28
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.