Plasma source ion implantation for ultrashallow junctions: low energy and high dose rate

Title
Plasma source ion implantation for ultrashallow junctions: low energy and high dose rate
Authors
조정희한승희이연희김옥경김곤호김영우임현의정혜선
Keywords
plasma source ion implantation; ultrashallow junction
Issue Date
2001-04
Publisher
Japanese Journal of Applied Physics, Part 1- Regular Papers
Citation
VOL 40, NO 4A, 2506-2507
URI
http://pubs.kist.re.kr/handle/201004/22961
ISSN
0021-4922
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE