The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films

Title
The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films
Authors
오정환오병준최두진김긍호송휴섭
Keywords
SiC films; CVD; growth behavior; RBSC substrate
Issue Date
2001-04
Publisher
Journal of materials science
Citation
VOL 36, NO 7, 1695-1700
URI
http://pubs.kist.re.kr/handle/201004/22968
ISSN
0022-2461
Appears in Collections:
KIST Publication > Article
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